Preparation of Aluminum‐Doped Zinc Oxide Films by a Normal‐Pressure CVD Method
- 1 December 1992
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 75 (12), 3469-3472
- https://doi.org/10.1111/j.1151-2916.1992.tb04452.x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Deposition of Aluminum-Doped Zinc Oxide Thin Films by Spray PyrolysisJapanese Journal of Applied Physics, 1992
- Aluminum doped zinc oxide thin films deposited by ion beam sputteringJournal of Crystal Growth, 1989
- Low cost, non-vacuum techniques for the preparation of thin/thick films for photovoltaic applicationsProgress in Crystal Growth and Characterization, 1988
- Optical properties of sputter-deposited ZnO:Al thin filmsJournal of Applied Physics, 1988
- Self-energy shifts in heavily doped, polar semiconductorsPhysical Review B, 1987
- Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1985
- Band-gap widening in heavily Sn-dopedPhysical Review B, 1984
- Preparation and Properties of Pyrolytic Zirconium Dioxide FilmsJournal of the Electrochemical Society, 1971
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954