Rapid Thermal Annealing of Tisi2 for Interconnects
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effects of ion implantation doping on the formation of TiSi2Journal of Vacuum Science & Technology A, 1984
- TiSi2/TiN–A Stable Multilayered Contact Structure for Shallow Implanted Junctions in VLSI TechnologyPhysica Scripta, 1983
- Refractory metal silicides for VLSI applicationsJournal of Vacuum Science and Technology, 1981
- Thin Film ProcessesJournal of the Electrochemical Society, 1980