Structural Determination of -SiC(100)- from C-1 Surface-Core-Exciton and Si- Absorption
- 5 February 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (6), 991-994
- https://doi.org/10.1103/physrevlett.76.991
Abstract
The marked polarization dependences of two C-1s surface-core-exciton transitions—as revealed by near-edge x-ray absorption fine structure on single-domain —are used, together with absorption and molecular orbital cluster calculations, to settle the long-standing controversy over the structure of this surface. The surface is terminated with staggered rows of unusual, nearly triply-bonded C dimers bridging underlayer Si dimers. Resonant valence-band photoemission accompanying exciton autoionization reveals directly the electronic structure of the C dimers.
Keywords
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