Electronic and Atomic Structure of GaAs Epitaxial Overlays on Si(111)
- 26 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (26), 2957-2960
- https://doi.org/10.1103/physrevlett.61.2957
Abstract
The atomic structure occurring at the interface between Si(111) and thin GaAs epitaxial overlayers has a pronounced effect on the surface electronic structure, thus making it possible to infer structural information by comparing measured surface-state energies with those calculated for possible interface bonding arrangements. The atomically abrupt interface...SiAsGaAs, in addition to being energetically very unfavorable, is inconsistent with measured valence-band photoemission spectroscopy. Our results indicate that the interface is not atomically abrupt.Keywords
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