Picosecond optoelectronic devices for millimeter waves
- 1 January 1983
- conference paper
- Published by Optica Publishing Group
Abstract
Recently a great deal of attention has been given to a general class of switching and gating device based on the photoconductivity effect using picosecond optical pulses.1-3 The photoconductivity effect is the long-wavelength limit of a more general phenomenon in which the complex dielectric constant of the semiconducting medium is modified by introduction of an optically induced electron-hole plasma. When the dimension of the plasma region is much smaller than the wavelength of the low- frequency (including dc) rf signals which one wants to control, the plasma region may be regarded as a lumped circuit element. If the wavelength of the rf signals is comparable to or smaller than the dimension of the plasma region, the plasma region must be treated as a distributed circuit element.Keywords
This publication has 2 references indexed in Scilit:
- High-power switching with picosecond precisionApplied Physics Letters, 1979
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975