Large band gap bowing of InxGa1−xN alloys
- 25 May 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (21), 2725-2726
- https://doi.org/10.1063/1.121072
Abstract
Band gap measurements have been performed on strained epilayers with The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. At the calculated bowing parameter is in good agreement with the experimental values.
Keywords
This publication has 15 references indexed in Scilit:
- Optical anisotropy of excitons in strained GaN epilayers grown along the 〈101¯0〉 directionPhysical Review B, 1997
- Theoretical treatment of the nonlinear anelastic internal friction peaks appearing in the cold-worked Al-based solid solutionsPhysical Review B, 1997
- III–V nitride based light-emitting devicesSolid State Communications, 1997
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Optical Properties of Strained AlGaN and GaInN on GaNJapanese Journal of Applied Physics, 1997
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974