The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAs
- 16 September 1971
- journal article
- Published by Wiley in physica status solidi (a)
- Vol. 7 (1), 135-140
- https://doi.org/10.1002/pssa.2210070114
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The 0.93 and 1.02 eV luminescence in p-GaAsphysica status solidi (a), 1970
- The injection laserPhysica Status Solidi (b), 1968
- Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)Physica Status Solidi (b), 1967
- Determination of the Parameters of Sensitizing Recombination Centres in CdS and CdSe Single Crystals by Temperature and Optical Quenching of PhotocurrentsPhysica Status Solidi (b), 1965