Molecular beam epitaxial growth of GaP on Si

Abstract

The molecular-beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90%, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.