Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11R)
- https://doi.org/10.1143/jjap.35.5711
Abstract
We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm2, and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.Keywords
This publication has 3 references indexed in Scilit:
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laserElectronics Letters, 1996
- Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasersIEEE Journal of Quantum Electronics, 1991