Surface and interface depletion corrections to free carrier-density determinations by hall measurements
- 31 July 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (7), 645-650
- https://doi.org/10.1016/0038-1101(79)90138-2
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- On the interpretation of photoconductivity and photo-hall spectra in semi-insulating GaAs:CrSolid State Communications, 1977
- Thermally converted surface layers in semi-insulating GaAsApplied Physics Letters, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Purity of GaAs grown by LPE in a graphite boatJournal of Crystal Growth, 1976
- The system Ga–As–Sn: Incorporation of Sn into GaAsJournal of Applied Physics, 1973
- Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface LayerJournal of Applied Physics, 1972
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963