SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONS
- 15 August 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (4), 141-143
- https://doi.org/10.1063/1.1653340
Abstract
Heterojunctions of nZnSe–pGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks.Keywords
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