Logic circuit elements using single-electron tunnelling transistors
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (21), 1883-1884
- https://doi.org/10.1049/el:19991231
Abstract
Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of the transistors.Keywords
This publication has 6 references indexed in Scilit:
- Operation of logic function in a Coulomb blockade deviceApplied Physics Letters, 1998
- Silicon single electron memory cellApplied Physics Letters, 1998
- Single-electron logic device based on the binary decision diagramIEEE Transactions on Electron Devices, 1997
- Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wireJournal of Applied Physics, 1997
- Single-electron memoryElectronics Letters, 1993
- Complementary digital logic based on the ‘‘Coulomb blockade’’Journal of Applied Physics, 1992