Characterization of the interface states at a Ag/Si interface from capacitance measurements

Abstract

From the variation of the quasi‐Fermi levels at the interface of a Ag–Si diode under forward bias, we present a new way to characterize the interface states of such an interface from capacitance and conductance measurement. We obtained the density, the time constant, and the capture cross section of the interface states. The relative energy distribution of the interface states is in close agreement with those deduced from our photoelectric measurements. Such a determination implies that interface states are in equilibrium with silicon, in agreement with Heine's theory.