Mobility of Bromine Vacancies in KBr Single Crystals

Abstract

Dielectric loss measurements were made on KBr single crystals doped with sulfide ions, from 0.1 to 1000 cps. The technique is described. The activation energy for a jump of an associated bromine vacancy is 0.94±0.03 ev, whereas 1.02±0.03 ev was found for free vacancies. A dependency of the frequency factor on the thermal treatment was observed.