Equilibrium Shape of Steps and Islands on Polar II-VI Semiconductors Surfaces
- 20 September 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 83 (12), 2366-2369
- https://doi.org/10.1103/PhysRevLett.83.2366
Abstract
Scanning tunneling microscopy studies of (001) surfaces of partially ionic II-VI compounds show novel surface structures with step and 2D island edges aligned along the crystallographic directions. We propose a simplified model incorporating electrostatic interactions in the calculation of the energy of charged steps that could explain why the free energy of steps lies below that of the and steps. The energetics of the vicinal surfaces is strongly influenced by this original effect which makes possible the fabrication of staircase and checkerboard templates for growing self-organized nanostructures.
Keywords
This publication has 18 references indexed in Scilit:
- From periodic monomolecular step array to macrosteps in pure and Si-doped MBE-grown GaAs on vicinal (001) surfacesEurophysics Letters, 1997
- Physics and Chemistry at Oxide SurfacesPublished by Cambridge University Press (CUP) ,1996
- Atomic layer epitaxy of CdTe and MnTeJournal of Applied Physics, 1996
- Atom Motion on SurfacesPhysics Today, 1993
- Step and kink energetics on GaAs(001)Physical Review Letters, 1993
- Step morphologies on small-miscut Si(001) surfacesPhysical Review B, 1993
- Anisotropy in surface migration of Si and Ge on Si(001)Surface Science, 1991
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- Spontaneous Formation of Stress Domains on Crystal SurfacesPhysical Review Letters, 1988
- Calculation of the lattice structure on stepped surfaces of Ar and NaClPhysical Review B, 1975