Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 1375-1378
- https://doi.org/10.1016/0022-3093(87)90329-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structuresJournal of Vacuum Science & Technology A, 1987
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous siliconApplied Physics Letters, 1985
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979