Current-voltage characteristics of ZnO-Bi2O3 heterojunction
- 1 January 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1), 555-558
- https://doi.org/10.1063/1.325653
Abstract
Thin‐film junctions of ZnO‐Bi2O3 have been made by sputtering. The junction breakdown voltage ranges from 2.3 to 3.0 V when ZnO is positively biased. A negative resistance usually appears after the breakdown. When ZnO is negatively biased, the current is proportional to an exponential function of the applied voltage with a built‐in barrier of roughly 0.8 V. These characteristics and their temperature dependence on being cooled down to 77 °K will be discussed in terms of a qualitative n‐n heterojunction with interface states.Keywords
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