Shallow acceptors and p-type ZnSe
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2), 194-196
- https://doi.org/10.1063/1.91034
Abstract
Shallow acceptors have been incorporated in ZnSe by liquid‐phase epitaxy using Bi as a solvent. Epilayers with Li, Na, N, and P as dopants were proven to be p type by establishing the position of the Fermi level by photocapacitance and photoconductivity measurements, and by measuring the potential drop at biased Schottky barriers.Keywords
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