implantation of Bi into GaP. II. channeling studies
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (2), 293-299
- https://doi.org/10.1080/00337577008236309
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- INFLUENCE OF n-TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p-TYPE DOPANTS IN Si AND GeApplied Physics Letters, 1969
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968