Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon
- 15 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (14), 10257-10260
- https://doi.org/10.1103/physrevb.41.10257
Abstract
A microscopic model for metastability in hydrogenated amorphous silicon (a-Si:H) involving two-hydrogen-atom complexes is proposed. Metastable-defect formation occurs when this complex dissociates creating two interstitial H atoms which form Si dangling-bond-like defects at weak-bond sites. Annealing occurs when the H atoms reform complexes.Keywords
This publication has 22 references indexed in Scilit:
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Role of hydrogen in the formation of metastable defects in hydrogenated amorphous siliconPhysical Review B, 1989
- Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:HJapanese Journal of Applied Physics, 1988
- Light-induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon filmsJournal of Applied Physics, 1986
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Metastable defects in amorphous silicon alloysJournal of Non-Crystalline Solids, 1984
- Role of carbon in hydrogenated amorphous silicon solar cell degradationApplied Physics Letters, 1984
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980