Effect of uniaxial stress on energy loss and scattering mechanism in p-type silicon
- 1 January 1972
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 33 (1), 139-143
- https://doi.org/10.1016/s0022-3697(72)80061-1
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Conductivity of Hot Holes in Silicon at 77 °KPhysica Status Solidi (b), 1970
- MEASUREMENT OF THE PHENOMENOLOGICAL ENERGY RELAXATION TIME IN n-Si AT 77°K LATTICE TEMPERATUREApplied Physics Letters, 1969
- Energie-Relaxation warmer Ladungsträger in Germanium und SiliziumThe European Physical Journal A, 1969
- Energy relaxation of warm holes in p-type telluriumSolid State Communications, 1969
- Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and SiliconPhysical Review B, 1966
- Electric Field Dependence of Conduction by Electrons in Nearly Pure GermaniumPhysical Review B, 1965
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Beweglichkeitsanisotropie und Relaxation warmer Elektronen inn-Typ GermaniumThe European Physical Journal A, 1963
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954