Initial stage of room-temperature metal-silicide formation studied by high-energy-ion scattering
- 15 October 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (8), 4835-4838
- https://doi.org/10.1103/physrevb.24.4835
Abstract
Room-temperature reactivities of Au, Ag, and Pd deposited on clean Si(111) substrate surfaces have been studied by MeV -ion scattering. It is directly shown that there exists an average threshold film thickness of about three monolayers for gold or silver silicide formation. However, palladium interacts with silicon even at submonolayer coverage to form an amorphous PdSi-like film.
Keywords
This publication has 12 references indexed in Scilit:
- Structure study of Au–Si interface by MeV ion scatteringJournal of Vacuum Science and Technology, 1981
- A Model on the Mechanism of Room Temperature Interfacial Intermixing Reaction in Various Metal‐Semiconductor Couples: What Triggers the Reaction?Journal of the Electrochemical Society, 1980
- Direct observation of the nucleation and growth modes of Ag/Si(111)Surface Science, 1980
- Chemical and structural properties of the Pd/Si interface during the initial stages of silicide formationJournal of Vacuum Science and Technology, 1979
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- LEED-AES study of the AuSi(100) systemSurface Science, 1979
- AES study of the very first stages of condensation of gold films on silicon (111) surfacesSurface Science, 1977
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Lattice Location by Channeling Angular Distributions: Bi Implanted in SiPhysical Review B, 1972