Ag on the Si(001) surface: Growth of the first monolayer at room temperature
- 15 May 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (20), 13491-13497
- https://doi.org/10.1103/physrevb.47.13491
Abstract
Growth of the first monolayer (ML) of Ag on the Si(001) surface at room temperature has been studied by means of scanning tunneling microscopy (STM) and low-energy electron diffraction. Ag atoms form single-layer islands with a density of one Ag atom per Si surface atom. These Ag islands exhibit both local 2×1 and 2×2 order. As the Ag coverage approaches 1 ML, the 2×1 order disappears in favor of the 2×2 order. One ML of Ag is required to complete the first full surface layer. There is no evidence of three-dimensional Ag growth up to 1 ML. Models of the 2×1 and 2×2 surface structures are proposed on the basis of the STM images.Keywords
This publication has 11 references indexed in Scilit:
- Ag on Si(001): Growth behavior of the annealed surfacePhysical Review B, 1993
- Freezing of the 2 × 1 structure at commensurate Ag(100)Si(100) interfaceSurface Science, 1992
- The initial stages of the oxidation of Si(100)2 x 1 studied by STMUltramicroscopy, 1992
- FI-STM study of alkali metal adsorption on Si surfacesSurface Science, 1991
- Initial stage deposition of Ag on the Si(100)2×1 surface studied by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- The growth of Ag films on Si(100)Journal of Vacuum Science & Technology A, 1990
- Scanning-tunneling-microscopy studies of Ag on Si(100)-(2×1)Physical Review Letters, 1989
- Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopyJournal of Vacuum Science & Technology A, 1989
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983
- A LEED-AES study of the growth of Ag films on Si(100)Surface Science, 1982