The Growth and Characterization of HgTe Epitaxial Layers Made by Organometallic Epitaxy

Abstract

Mercury telluride layers have been grown on cadmium telluride substrates, by the reaction of diethyltelluride and mercury. Typical growth rates, at 415°C, are 3.3 μm/h. Resulting films had an apparent Hall mobility of at liquid nitrogen temperature, and an effective electron concentration of . The growth and electrical characteristics of these films are described in this paper.