Growth of p-Type Gallium Antimonide Single Crystals by a Temperature-Gradient Transport Technique

Abstract

Undoped p‐type gallium antimonide single crystals were grown by a steady‐state temperature‐gradient transport method. The melt composition was varied from 0.62 to 0.84 atom fraction Sb. The lowest carrier concentration achieved was 4×10¹⁶ holes/cm³, at 300°K. It was concluded that no significant further reduction in carrier concentration is to be expected for GaSb grown from Sb‐rich melts under quasiequilibrium conditions.