Some unique aspects on ThO2-doped SnO2 exposed to H2 gas
- 1 February 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2), 1145-1146
- https://doi.org/10.1063/1.326054
Abstract
In ThO2‐doped SnO2 exposed to H2 gas, the remarkable phenomenon like the increase of sample resistivity has been found in spite of n‐type semiconductors. This phenomenon depends on the gas concentration, the sample temperature, and also the history of the samples. In samples sintered at 600 °C, it appears remarkably at the sample temperature below 240 °C and above 250 ppm of the gas concentration.Keywords
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