Microhardness scaling and bulk modulus‐microhardness relationship in AIIBIVC chalcopyrite compounds
- 1 January 1988
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 23 (1), 97-102
- https://doi.org/10.1002/crat.2170230113
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Microhardness of tetrahedrally bonded elemental and binary semiconductorsCrystal Research and Technology, 1987
- Bulk modulus — volume — ionicity relationship in tetrahedrally bonded semiconductorsCrystal Research and Technology, 1987
- Bulk Modulus-Volume Relationship in Ternary Chalcopyrite CompoundsPhysica Status Solidi (a), 1986
- A simple estimation of the bulk module of ternary chalcopyrite semiconducting compounds by means of the debye characteristic temperatureCrystal Research and Technology, 1985
- Anisotropy of temperature factors and interatomic forces in II-IV-V2 semiconductorsCrystal Research and Technology, 1983
- About the average bond ionicity in AIBIIIC compoundsCrystal Research and Technology, 1983
- Elastic behaviour of the chalcopyrite CdGeAs2Journal of Physics C: Solid State Physics, 1982
- On surface energy and compressibility of A2B4C25 semiconducting compoundsPhysica Status Solidi (a), 1979
- High‐temperature modifications of the semiconductor compounds CdSnAs2 and CdGeAs2Physica Status Solidi (b), 1968
- Semiconducting AIIBIVC CompoundsPhysica Status Solidi (b), 1967