Dispersion of the group velocity refractive index in GaAs double heterostructure lasers
- 1 February 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (2), 164-169
- https://doi.org/10.1109/jqe.1983.1071836
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Generation of short optical pulses in semiconductor lasers by combined DC and microwave current injectionIEEE Journal of Quantum Electronics, 1982
- Effects of hole burning on pulse propagation in GaAs quantum wellsPhysical Review B, 1982
- Generation of subpicosecond pulses from an actively mode locked GaAs laser in an external ring cavityApplied Physics Letters, 1981
- Modelocking of Semiconductor Laser DiodesJapanese Journal of Applied Physics, 1981
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- Spectral broadening of pulsating AlxGa1-xAs double heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guideApplied Physics Letters, 1979
- Weakly Guiding FibersApplied Optics, 1971
- Propagation of a Gaussian Light Pulse through an Anomalous Dispersion MediumPhysical Review A, 1970
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964