Structures chimique et electronique de l'interface SiO2-Si
- 31 July 1981
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 8 (3), 318-336
- https://doi.org/10.1016/0378-5963(81)90126-4
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Aes study of silicon bonding states during oxidation of Si(111)Surface Science, 1980
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- SiSiO2 interface characterization by ESCASurface Science, 1979
- Electron-spectroscopic studies of the early stages of the oxidation of SiPhysical Review B, 1979
- Morphology and electronic structure of Si–SiO2 interfaces and Si surfacesJournal of Vacuum Science and Technology, 1979
- Properties of the silicon–SiO2 interfaceJournal of Vacuum Science and Technology, 1977
- Electronic states at the silicon-silicon dioxide interfaceProgress in Surface Science, 1977
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on siliconChemical Physics Letters, 1975
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975