Float-zoned silicon with homogeneous dopant distribution
- 16 September 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (1), 149-152
- https://doi.org/10.1002/pssa.2210250112
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Lamellar growth phenomena in 〈111〉-oriented dislocation-free float-zoned silicon single crystalsPhysica Status Solidi (a), 1974
- Breakdown behavior of rectifiers and thyristors made from striation-free siliconIEEE Transactions on Electron Devices, 1974
- Oszillation der Erstarrungsgeschwindigkeit beim Kristallwachstum aus der Schmelze mit rotierendem KeimkristallCrystal Research and Technology, 1973