Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography

Abstract

The effects of photoelectrons and Auger electrons from the X-ray mask on the contrast and resolution were investigated in the replication of submicron resist patterns in X-ray lithography. A resist thinner than 550 Å was exposed to electrons generated by an Si–N membrane. The effect of electrons from the Au absorber is observed even with a 1 µm thick Au absorber pattern, because of the continuous radiation generated, shorter than the characteristic radiation. A polymer film coating on the Au absorber pattern increases the contrast of the mask, because electrons from the X-ray mask are absorbed by the polymer film.