Significance of the channel—Charge partition in the transient MOSFET model

1 October 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (10), 1621-1623
https://doi.org/10.1109/T-ED.1986.22716

Abstract

Physical insight regarding charge-based transient MOSFET modeling is developed to reveal the significance of the channel-charge partition. Components (charging, displacement, transport, and convection) of transient channel current are discussed in terms of charge (actual and model), and clarification concerning "nonreciprocal capacitance" and origins of error in quasi-static models is given.

Keywords

VOLTAGE
CAPACITANCE
COMPUTER SIMULATION
ADMITTANCE
UNCERTAINTY

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