Channeling analysis of stacking defects in epitaxial Si layers
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3), 371-376
- https://doi.org/10.1016/0029-554x(78)90890-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated goldNuclear Instruments and Methods, 1976
- Correlation of ion channeling and electron microscopy results in the evaluation of heteroepitaxial siliconJournal of Applied Physics, 1973
- Ion channeling studies of the crystalline perfection of epitaxial layersJournal of Applied Physics, 1973
- Monte Carlo Channeling CalculationsPhysical Review B, 1971
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968