Current-voltage characteristics of Al–SiO2–Si structures
- 1 September 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (5), 233-235
- https://doi.org/10.1063/1.1654358
Abstract
Experimental results are presented on conduction, breakdown, and switching in Al–SiO2–Si MOS dots. Transitions from the low‐conduction state are found to terminate in self‐healing breakdowns. There also exists a higher‐conduction state in which destructive breakdowns do not occur.Keywords
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