Growth of CdS/ZnS strained layer superlattices on GaAs(001) by molecular-beam epitaxy with special reference to their structural properties and lattice dynamics
- 30 April 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 200 (3-4), 391-398
- https://doi.org/10.1016/s0022-0248(99)00046-9
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Localization of excitons in ultrathin CdS/ZnS quantum structuresJournal of Crystal Growth, 1998
- Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxyPhysical Review B, 1997
- Electronic states and optical gain in strained CdS/ZnS quantum structuresPhysical Review B, 1997
- Deep blue and UV photoluminescence from ZnS/CdS superlattices and quantum wellsJournal of Crystal Growth, 1994
- Spectroscopic characterization of band discontinuity in free-standing CdZnS/ZnS strained layer superlatticesJournal of Applied Physics, 1994
- Growth and characterization of (CdS)4(ZnS)16 superlatticesJournal of Crystal Growth, 1993
- The Zn(Cd)S(Se) family of superlatticesJournal of Luminescence, 1992
- Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxyJournal of Crystal Growth, 1990
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD MethodJapanese Journal of Applied Physics, 1988
- Properties of CdS-ZnS superlattices prepared by hot wall epitaxyApplied Surface Science, 1988