Organic-transistor-based flexible pressure sensors using ink-jet-printed electrodes and gate dielectric layers
- 18 December 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (25), 253507
- https://doi.org/10.1063/1.2416001
Abstract
The authors have fabricated diagonal flexible pressure sensors using organic field-effect transistor (FET) active matrices. Polyimide precursors and silver nanoparticles are patterned on a polyimide film by using an ink-jet printing system and cured at to form gate dielectric layers and electrodes for organic FETs, respectively. In order to define the device dimensions, epoxy partitions are prepared by a screen printing system. The mobility of the transistors is and the on/off ratio exceeds . Spatial distributions of pressure are read out by an organic FET active matrix.
Keywords
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