The effects of inorganic and organic surface active agents on the behavior of the {111} surfaces in oxidizing etchants were investigated. It was found that specific adsorption of these agents leads to a decrease in the dissolution rate of and pronounced changes in the microstructure of the {111} surfaces. In the presence of an organic sulfide it was possible to develop etch pits which were identified with Sb edge dislocations on the {111} surfaces. This result was verified by means of plastic deformation experiments. Electrical measurements at 78°K suggest that Sb dislocations serve as electron donors whereas In dislocations serve as electron acceptors.