Luminescence of isoelectronic traps in laser-annealed, tellurium-coated zinc sulphide
- 28 February 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 37 (8), 625-627
- https://doi.org/10.1016/0038-1098(81)90536-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Laser annealing of ion implanted semiconductórsJournal of Crystal Growth, 1980
- Luminescence of Bound Excitons in Tellurium-Doped Zinc Sulfide CrystalsJapanese Journal of Applied Physics, 1973
- Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloysJournal of Luminescence, 1970