Transverse Magnetoresistance and Hall Effect inp-Type Germanium

Abstract

The transverse magnetoresistance and Hall coefficient in high-resistivity $p$-type germanium were measured in pulsed magnetic fields up to 165 kG and at temperatures between 18 and 77°K. The magnetoresistance ratio had roughly the same field and temperature dependences for all four orientations measured; i.e., at fields above 100 kG and temperatures below 50°K it was proportional to $H^{0.8}{T}^{-1.3\mathrm{}}$. A similar behavior has been observed in $n$-type germanium, and thus, these measurements do not reflect any difference in the structures of the germanium conduction and valence bands. The Hall coefficient increased with field at temperatures below 25°K. This is attributed to a decrease in the valence-band hole density due to a change in the ionization energy.