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Reactive ion etching of GaAs and InP using SiCl4
Home
Publications
Reactive ion etching of GaAs and InP using SiCl4
Reactive ion etching of GaAs and InP using SiCl4
MS
M. B. Stern
M. B. Stern
PL
P. F. Liao
P. F. Liao
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1 October 1983
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 1
(4)
,
1053-1055
https://doi.org/10.1116/1.582674
Abstract
No abstract available
Cited by 42 articles