Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer

Abstract

Mg doped AlInP was used as the p-type cladding layer of 620 nm-band multiple quantum well separate confinement heterostructure (MQW-SCH) AlGaInP semiconductor lasers for the first time. The low threshold current density of l.81 kA cm-2 for broad area lasers (stripe width: 50 μm, cavity length: 300 μm) was obtained at 628 nm.