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n-inversion layers on oxidized p-type silicon
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n-inversion layers on oxidized p-type silicon
n-inversion layers on oxidized p-type silicon
FL
F. Leuenberger
F. Leuenberger
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1 January 1965
journal article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
in
Proceedings of the IEEE
Vol. 53
(11)
,
1761
https://doi.org/10.1109/PROC.1965.4380
Abstract
No abstract available
Keywords
OXIDATION
IMPURITIES
VOLTAGE
CAPACITANCE
SILICON COMPOUNDS
TEMPERATURE
CONDUCTIVITY
SPACE CHARGE
EXTRATERRESTRIAL PHENOMENA
ELECTRODES
Cited by 3 articles