Metal-organic vapor deposition of CdTe and HgCdTe films
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9), 5087-5089
- https://doi.org/10.1063/1.332783
Abstract
Epitaxial films of CdTe and HgCdTe have been grown on 〈111〉A CdTe substrates using metal‐organic reagents. Specular CdTe films were grown at the investigated substrate temperatures between 370 and 410 °C. Specular Hg1−x CdxTe films with X≥0.15 were obtained at substrate temperatures of 400–410 °C. The HgCdTe growth rate was nominally 6 μm/h for Hg0.8 Cd0.2Te. The HgCdTe films are n type and a liquid nitrogen mobility of 140 000 cm2/V sec was measured for Hg0.85Cd0.15Te. The interdiffusion width at the CdTe–HgCdTe heterojunction is nominally 1 μm.Keywords
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