Use of μ-Si:H Wide Band Gap N- and P-Type Materials for Producing Solar Cells by a TCDDC System
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of U.V. light on the transport properties of a-Si : H films during their growthJournal of Non-Crystalline Solids, 1987
- Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cellsSolar Energy Materials, 1982
- Solar cells using discharge-produced amorphous siliconJournal of Electronic Materials, 1977