Recent Results In Semi-Insulating Indium Phosphide Crystal Growth

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Abstract
Dislocation content and thermal stability are improved by codoping iron doped semi-insulating (SI) InP with isoelectronic impurities. By using 3d impurities (Ti or Cr) as deep compensating donors, new SI InP have been grown. The thermal stability of Ti doped InP will be shown to be superior to that of Fe or Cr doped InP.© (1987) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.