Near-band-gap photoluminescence of Hg1−xCdxTe
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2), 200-203
- https://doi.org/10.1063/1.91824
Abstract
The results of photoluminescence studies of Hg1−xCdxTe with x=0.32 and 0.48 for temperatures between 5 and 30 K are described. In the x=0.32 and x=0.48 material, band‐to‐band, band‐to‐acceptor, and donor‐to‐acceptor luminescence lines are observed. We report the first observation of bound‐exciton luminescence in HgCdTe, which we observe in the samples with x=0.48.Keywords
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