Modeling of frequency dependent losses in two-port and three-port inductors on silicon
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
New compact model forms for two-port and three-port symmetric inductors fabricated on silicon are discussed in this paper. These new models incorporate a frequency independent RL network that mimics the skin effect behavior of transmission lines on conductive substrates and can accurately predict the inductive behavior as well as the one-port single-ended and the one-port differential Q of these devices at microwave and millimeter wave frequencies. The new models are validated on inductors fabricated in a thick plated copper process.Keywords
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