A new contact for FET gate deposition, whose technology is similar to that for MESFET's, is demonstrated in InP. We have measured a significant reduction in reverse leakage current achieving JR= 1 × 10-3A/cm-2at 300 K at -2 V and an improved forward turn-on voltage, enhanced from 0.25 to 1.0 V at 300 K compared to conventional Schottky barriers on InP. We have used this barrier to form the gate of n-channel FET's in InP.