Tunneling Current in a-Si:H/a-Si1-xCx:H Multilayer Structures
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A), L21-23
- https://doi.org/10.1143/jjap.25.l21
Abstract
Tunneling current in a-Si:H/a-Si1-x C x :H multilayer structures is observed at room temperature for the first time. The effective barrier height for tunneling is estimated to be 0.577 eV in a multilayer structure consisting of a-Si1-x C x :H with an optical energy gap of 3.0 eV and a-Si:H. The effective barrier height and the value of tunneling current can be varied by changing the optical energy gap of a-Si1-x C x :H.Keywords
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