Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction
- 14 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (20), 1920-1922
- https://doi.org/10.1063/1.100345
Abstract
High‐resolution x‐ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy.Keywords
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